 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19125/D The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. * Typical 2-Carrier N-CDMA Performance for VDD = 26 Volts, IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 -885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power -- 24 Watts Avg. Power Gain -- 13.6 dB Efficiency -- 22% ACPR -- -51 dB IM3 -- -37.0 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 125 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF19125 MRF19125S MRF19125SR3 1990 MHz, 125 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465B-03, STYLE 1 (NI-880) (MRF19125) CASE 465C-02, STYLE 1 (NI-880S) (MRF19125S) MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 +15, -0.5 330 1.89 -65 to +200 200 Unit Vdc Vdc Watts W/C C C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.53 Unit C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA RF Motorola, Inc. 2002 DEVICE DATA MRF19125 MRF19125S MRF19125SR3 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 1300 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss -- 5.4 -- pF gfs VGS(th) VGS(Q) VDS(on) -- 2 2.5 -- 9 -- 3.9 0.185 -- 4 4.5 0.21 S Vdc Vdc Vdc V(BR)DSS IGSS IDSS 65 -- -- -- -- -- -- 1 10 Vdc Adc Adc Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture) 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg = 9.8 dB @ 0.01% Probability on CCDF. Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and f2 +2.5 MHz) Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured over 30 kHz Bandwidth at f1 -885 MHz and f2 +885 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 125 W CW, IDQ = 1300 mA, f = 1930 MHz, VSWR = 5:1, All Phase Angles at Frequency of Test) (1) Part is internally matched both on input and output. Gps 12 13.5 -- dB 19 22 -- % IMD -- -37 -35 dBc ACPR -- -51 -47 dBc IRL -- -13 -9 dB No Degradation In Output Power Before and After Test MRF19125 MRF19125S MRF19125SR3 2 MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic FUNCTIONAL TESTS (In Motorola Test Fixture) Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1990 MHz, Tone Spacing = 100 kHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1990 MHz, Tone Spacing = 100 kHz) Third Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1990 MHz, Tone Spacing = 100 kHz) Input Return Loss (VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1990 MHz, Tone Spacing = 100 kHz) Pout, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 1300 mA, f = 1990 MHz) Gps -- 13.5 -- dB Symbol Min Typ Max Unit -- 35 -- % IMD -- -30 -- dBc IRL -- -13 -- dB P1dB -- 130 -- W MOTOROLA RF DEVICE DATA MRF19125 MRF19125S MRF19125SR3 3 VGG R1 + C5 C4 C3 C2 Z4 RF INPUT Z8 C7 B1 R3 VDD R2 + C8 + C9 L1 C10 C11 + C12 + C13 + C14 Z1 C1 Z2 Z3 DUT Z5 Z6 C6 Z7 RF OUTPUT Z1, Z7 Z2 Z3 Z4 Z5 Z6 Z8 0.500 x 0.084 Microstrip 1.105 x 0.084 Microstrip 0.360 x 0.895 Microstrip 0.920 x 0.048 Microstrip 0.605 x 1.195 Microstrip 0.800 x 0.084 Microstrip 0.660 x 0.095 Microstrip Board PCB 0.030 Glass Teflon, Keene GX-0300-55-22, r = 2.55 Etched Circuit Boards MRF19125 Rev. 5, CMR Figure 1. MRF19125 Test Circuit Schematic Table 1. MRF19125 Test Circuit Component Designations and Values Designators B1 C1 C2, C7 C3, C10 C4, C11 C5 C6 C8 C9, C12, C13, C14 L1 N1, N2 R1 R2 R3 Description Short Ferrite Bead, Fair Rite #2743019447 51 pF Chip Capacitor, ATC #100B510JCA500X 5.1 pF Chip Capacitors, ATC #100B5R1JCA500X 1000 pF Chip Capacitors, ATC #100B102JCA500X 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 0.1 mF Tantalum Chip Capacitor, Kemet #T491C105M050 10 pF Chip Capacitor, ATC #100B100JCA500X 10 mF Tantalum Chip Capacitor, Kemet #T491X106K035AS4394 22 mF Tantalum Chip Capacitors, Kemet #T491X226K035AS4394 1 Turn, #20 AWG, 0.100 ID, Motorola Type N Flange Mounts, Omni Spectra #3052-1648-10 1.0 k, 1/8 W Chip Resistor 220 k, 1/8 W Chip Resistor 10 , 1/8 W Chip Resistor MRF19125 MRF19125S MRF19125SR3 4 MOTOROLA RF DEVICE DATA C2 R1 B1 C3 CUT OUT C7 L1 C10 C8 R3 C11 C9 R2 C5 C4 C1 C12 C13 C14 C6 MRF19125 Rev 5 Figure 2. MRF19125 Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF19125 MRF19125S MRF19125SR3 5 TYPICAL CHARACTERISTICS , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS Avg.) N CDMA -28 -35 -42 -49 -56 ACPR 40 -63 -70 IM3 (dBc), ACPR (dBc) -20 -30 -40 -50 -60 7th Order 4 10 Pout, OUTPUT POWER (WATTS) PEP 100 150 11 5 -70 VDD = 26 Vdc IDQ = 1300 mA f = 1960 MHz 100 kHz Tone Spacing 3rd Order 5th Order 17 41 35 29 23 , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) VDD = 26 Vdc, IDQ = 1300 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF) G ps IM3 IMD, INTERMODULATION DISTORTION (dBc) -80 Figure 3. 2-Carrier CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power -20 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) -25 -30 -35 -40 , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 24 22 IRL 20 18 16 14 12 Figure 4. Intermodulation Distortion Products versus Output Power 0 -10 -20 -30 -40 -50 -60 1990 2000 VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing IDQ = 900 mA 1100 mA 2 Carrier N CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 @ 0.01% Probability (CCDF) IM3 ACPR G ps 1920 1930 1940 1950 1960 1970 1980 VDD = 26 Vdc Pout = 24 Watts (Avg.) IDQ = 1300 mA -45 1700 mA -50 1500 mA -55 4 10 1300 mA 100 150 Pout, OUTPUT POWER (WATTS) PEP f, FREQUENCY (MHz) Figure 5. Third Order Intermodulation Distortion versus Output Power P in , INPUT POWER (WATTS), G ps , POWER GAIN (dB) 14 12 10 8 6 4 2 0 2 10 Pout, OUTPUT POWER (WATTS) P in 100 200 G ps VDD = 26 Vdc IDQ = 1300 mA f = 1960 MHz 56 48 40 32 24 16 8 0 , DRAIN EFFICIENCY (%) , DRAIN EFFICIENCY (%) 38 37 36 Figure 6. 2-Carrier N-CDMA Broadband Performance -27 IDQ = 1300 mA f = 1960 MHz 100 kHz Tone Spacing -28 -29 IMD 35 34 33 32 24 24.5 25 25.5 26 26.5 27 27.5 28 VDD, DRAIN SUPPLY (V) -30 -31 -32 -33 Figure 7. CW Performance Figure 8. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply MRF19125 MRF19125S MRF19125SR3 6 MOTOROLA RF DEVICE DATA IDQ = 1700 mA 1500 mA 35 30 25 20 15 10 -10 -15 G ps , POWER GAIN (dB) 13.5 1300 mA 1100 mA 13 IRL VDD = 26 Vdc Pout = 125 W (PEP) IDQ = 1300 mA 100 kHz Tone Spacing -20 -25 900 mA VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing 4 10 Pout, OUTPUT POWER (WATTS) PEP 100 150 12.5 IMD Gps -30 -35 1990 2000 12 1920 1930 1940 1950 1960 1970 1980 f, FREQUENCY (MHz) Figure 9. Two-Tone Power Gain versus Output Power Figure 10. Two-Tone Broadband Performance IMD, INTERMODULATION DISTORTION (dBc) -25 -30 -35 -40 -45 -50 -55 100 1000 Df, TONE SPACING (kHz) 5000 VDD = 26 Vdc IDQ = 1300 mA f = 1960 MHz 5th Order 3rd Order 0 -10 -20 (dB) -30 -40 -50 7th Order -60 -70 -ACPR @ 30 kHz BW f1 1.2288 MHz BW f2 1.2288 MHz BW +ACPR @ 30 kHz BW -IM3 @ 1.2288 MHz BW -5.00 -3.75 -2.50 -1.25 0.00 1.25 f, FREQUENCY (MHz) +IM3 @ 1.2288 MHz BW 2.50 3.75 5.00 Figure 11. Intermodulation Distortion Products versus Two-Tone Tone Spacing Figure 12. 2-Carrier N-CDMA Spectrum MOTOROLA RF DEVICE DATA MRF19125 MRF19125S MRF19125SR3 7 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 14 G ps , POWER GAIN (dB),, DRAIN EFFICIENCY (%) 40 -5 f = 1930 MHz f = 1990 MHz Zin VDD = 26 V, IDQ = 1300 mA, Pout = 24 W (Avg.) f MHz 1930 Zin 1.43 + j5.01 1.51 + j4.88 1.56 + j4.93 ZOL* 0.75 + j0.93 0.71 + j0.89 0.68 + j1.02 f = 1930 MHz f = 1990 MHz ZOL* Zo = 10 Zin 1960 1990 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Device Under Test Output Matching Network Z in Z * OL Figure 13. Series Equivalent Input and Output Impedance MRF19125 MRF19125S MRF19125SR3 8 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF19125 MRF19125S MRF19125SR3 9 NOTES MRF19125 MRF19125S MRF19125SR3 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS B G 4 1 2X Q bbb M TA M B M B (FLANGE) 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M M bbb ccc H M (INSULATOR) R ccc M (LID) M (INSULATOR) M TA TA M B B M TA TA M B S B N M M M (LID) aaa C M M F E A A (FLANGE) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE T SEATING PLANE CASE 465B-03 ISSUE C (NI-880) (MRF19125) B 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF B (FLANGE) K D TA 2 bbb M M B M M (INSULATOR) R ccc M (LID) M (INSULATOR) M bbb ccc H M TA TA M B B M TA TA M B S B N M M M (LID) aaa M M C F E A A (FLANGE) SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE T CASE 465C-02 ISSUE A (NI-880S) (MRF19125S) MOTOROLA RF DEVICE DATA MRF19125 MRF19125S MRF19125SR3 11 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852-26668334 Technical Information Center: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF19125 MRF19125S MRF19125SR3 12 MOTOROLA RF DEVICE MRF19125/D DATA |
Price & Availability of MRF19125
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |